? GB100XCP12-227 ? feb 2012 http://www.genesicsemi.com/i ndex.php/sic-products/copack pg 1 of 6 ? 1 2 3 igbt/sic diode co-pack features package ? optimal punch through (opt) technology ? sic freewheeling diode ? positive temperature coefficient for easy paralleling ? extremely fast switching speeds ? temperature independent switching behavior of sic rectifier ? best rbsoa/scsoa capability in the industry ? high junction temperature ? industry standard packaging ? ??????????? ????? sot ? 227 advantages applications ? industry's highest switching speeds ? high temperature operation ? improved circuit efficiency ? low switching losses ? ? aerospace actuators ? server power supplies ? resonant inverters > 100 khz ? inductive heating ? electronic welders maximum ratings at t j = 175 c, unless otherwise specified parameter symbol conditions values unit igbt collector-emitter voltage v ces 1200 v dc-collector current i c t c 130 c 100 a peak collector current i cm limited by t vjmax 200 a gate emitter peak voltage v ges 20 v igbt short circuit soa t psc v cc = 900 v, v cem 1200 v v ge 15 v, tv j 125 oc 10 s operating temperature t v j -40 to +175 c storage temperature t st g -40 to +175 c isolation voltage v isol i sol < 1 ma, 50/60 hz, t = 1 s 3000 v free-wheeling silicon carbide diode dc-forward current i f t c 130 oc 100 a non repetitive peak forward current i fm t c = 25 oc, t p = 10 s tbd a surge non repetitive forward current i f,sm t p = 10 ms, half sine, t c = 25 oc tbd a thermal characteristics thermal resistance, junction - case r thjc igbt 0.08 c/w thermal resistance, junction - case r thjc sic diode 0.53 c/w mechanical properties values min. typ. max. mounting torque m d 1.5 nm terminal connection torque 1.3 1.5 nm weight 29 g case color black dimensions 38 x 25.4 x 12 mm v ces = 1200 v i cm = 100 a v ce(sat) = 1.9 v 3 3 2 1
? GB100XCP12-227 ? feb 2012 http://www.genesicsemi.com/i ndex.php/sic-products/copack pg 2 of 6 ? electrical characteristics at t j = 175 c, unless otherwise specified parameter symbol conditions values unit min. typ. max. igbt gate threshold voltage v ge ( th ) v ge = v ce , i c = 4 ma, t j = 25 oc 5 6.2 7 v collector-emitter leakage current i ces,25 v ge = 0 v, v ce = v ces , t j = 25 oc 0.10 1 ma i ces,175 v ge = 0 v, v ce = v ces , t j = 175 oc 3.15 ma gate-leakage current i ges v ce = 0 v, v ge = 20 v, t j = 175 oc -400 400 na collector-emitter threshold voltage v ce ( to ) t j = 25oc 1.1 v collector-emitter slope resistance r ce,25 v ge = 15 v, t j = 25 oc 7.9 m ? r ce,175 v ge = 15 v, t j = 175 oc 11.4 m ? collector-emitter saturation voltage v ce(sat) i c = 100 a, v ge = 15 v, t j = 25 oc (175 oc) 1.9 (2.2) v input capacitance c ies v ge = 0 v, v ce = 25 v, f = 1 mhz, t j = 150 oc 8.55 nf output capacitance c oes 1.39 nf reverse transfer capacitance c res 0.25 nf internal gate resistance r gint 2 ? gate charge q g v cc = 750 v, i c = 100 a, v ge = -8..15 v, t j = 25 oc (125 c) 900 (900) nc module lead resistance r mod t c = 25 oc (175 oc) tbd m ? reverse bias safe operating area rbsoa t j =175 oc, r g =56 ? , v cc =1200 v, v ge =15 v 150 a short circuit current i sc t j = 175 oc, r g = 56 ? , v cc = 900 v, v ge = 15 v 470 a short circuit duration t sc 10 s rise time t r v cc = 800 v, i c = 100 a, r gon = r goff = 10 ? , v ge(on) = 15 v, v ge(off) = -8 v, l s = 0.8 h, t j = 25 oc 254 ns fall time t f 153 ns turn on delay time t d ( on ) 244 ns turn off delay time t d ( off ) 488 ns turn-on energy loss per pulse e on 14.2 mj turn-off energy loss per pulse e off 15.7 mj rise time t r v cc = 800 v, i c = 100 a, r gon = r goff = 10 ? , vge(on) = 15 v, v ge(off) = -8 v, l s = 0.8 h, t j = 175 oc 211 ns fall time t f 172 ns turn on delay time t d ( on ) 240 ns turn off delay time t d ( off ) 636 ns turn-on energy loss per pulse e on 11.1 mj turn-off energy loss per pulse e off 21.8 mj free-wheeling silicon carbide diode forward voltage v f i f = 100 a, v ge = 0 v, t j = 25 oc (175 oc ) 2.08 (3.5) v threshold voltage at diode v d ( to ) t j = 25 oc 0.8 v peak reverse recovery current i rrm i f = 100 a, v ge = 0 v, v r = 800 v, -di f /dt = 625 a/s, t j = 175 oc 10 a reverse recovery time t rr 100 ns rise time t r v cc = 800 v, i c = 100 a, r gon = r goff = 10 ? , vge(on) = 15 v, v ge(off) = -8 v, l s = 0.8 h, t j = 25 oc 148 ns fall time t f 336 ns turn-on energy loss per pulse e on 218 j turn-off energy loss per pulse e off 113 j reverse recovery charge q rr 730 nc rise time t r v cc = 800 v, i c = 100 a, r gon = r goff = 10 ? , vge(on) = 15 v, v ge(off) = -8 v, l s = 0.8 h, t j = 175 oc 178 ns fall time t f 268 ns turn-on energy loss per pulse e on 23 j turn-off energy loss per pulse e off 334 j reverse recovery charge q rr 480 nc
? GB100XCP12-227 ? feb 2012 http://www.genesicsemi.com/i ndex.php/sic-products/copack pg 3 of 6 ? figure 1: typical output characteristics at 25 c figure 2: typical output characteristics at 175 c figure 3: typical transfer characteristics figure 4: typical blocking characteristics figure 5: typical fwd forward characteristics figure 6: typical turn on gate charge
? GB100XCP12-227 ? feb 2012 http://www.genesicsemi.com/i ndex.php/sic-products/copack pg 4 of 6 ? figure 7: typical hard-switched igbt turn on waveforms figure 8: typical hard-switched igbt turn off waveforms figure 9: typical hard-switched free-wheeling sic diode turn off waveforms figure 10: typical hard-switched free-wheeling sic diode turn on waveforms figure 11: typical module energy losses and switching times at igbt turn on vs. temperature figure 12: typical module energy losses and switching times at igbt turn off vs. temperature
? GB100XCP12-227 ? feb 2012 http://www.genesicsemi.com/i ndex.php/sic-products/copack pg 5 of 6 ? figure 13: typical module energy losses and switching times at igbt turn on vs. current figure 14: typical module energy losses and switching times at igbt turn off vs. current figure 15: typical hard-switched reverse recovery charge vs. temperature figure 16: typical c-v characteristics
? GB100XCP12-227 ? feb 2012 http://www.genesicsemi.com/i ndex.php/sic-products/copack pg 6 of 6 ? package dimensions: sot-227 package outline ? note 1. controlled dimension is inch. di mension in bracket is millimeter. 2. dimensions do not include end fl ash, mold flash, material protrusions revision history date revision comments supersedes 2013/02/08 2 updated electrical characteristics 2012/07/30 1 second generation release ga100xcp12-227 2011/01/06 0 initial release published by genesic semiconductor, inc. 43670 trade center place suite 155 dulles, va 20166 genesic semiconductor, inc. reserves right to make changes to the product specificat ions and data in this document without noti ce. genesic disclaims all and any warranty and liability arising out of use or application of any product. no license, express or i mplied to any intellectual property rights is granted by this document. unless otherwise expressly indicated, genesic products are not designed, tested or authorized for use in life-saving, medical, aircraft navigation, communication, air traffic cont rol and weapons systems, nor in applications where their failure may result in death , personal injury and/or property damage.
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